Research in Electronic and Optoelectronic Materials and Devices

Jon M. Pikal, Associate Professor of Electrical and Computer Engineering

Ph. 307-766-3172 E-mail: jpikal@uwyo.edu

Areas of Expertise:
Semiconductor Materials and Devices, Optoelectronics, Semiconductor Lasers

Investigation of charge carrier processes in semiconductor materials and device, specifically carrier capture,
escape and recombination in semiconductor lasers. The studies center around understanding the temperature
dependence of the threshold current in long wavelength and optimization of laser materials and structure design.

Publications and Presentations:

O. Anton, C. S. Menoni, J.Y. Yeh, L. J. Mawst, J.M. Pikal and N. Tansu, “Increased monomolecular recombination in MOCVD grown 1.3μm InGaAsN/GaAsP/GaAs QW lasers from carrier lifetime measurements,” accepted for publication in IEEE Photonics Technology Letters.
O. Anton, D. Patel, G. Vaschenko, C. S. Menoni and J. M. Pikal, “Small signal response of 1.3 µm InAsP/InGaAsP quantum well laser diodes obtained with a THz-bandwidth frequency Comb,” IEEE Journal of Quantum Electronics, Vol. 40, No. 8, pp. 982-988, 2004.

O. Anton, D. Patel, C.S. Menoni, Jeng-Ya Yeh, L. Mawst, Nelson Tansu and J.M. Pikal, “Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (l=1.2-1.3mm) lasers,” in OSA Trends in Optics and Photonics (TOPS) Vol. 73, Conference on Lasers and Electro-Optics, OSA Technical Digest, Postconference Edition (Optical Society of America, Washington DC, 2004), pp. CTuJ1.

A. A. Dikshit and J. M. Pikal, “Carrier Distribution, Gain and Lasing in 1.3 µm InAs/InGaAs Quantum-Dot lasers,” accepted for publication in IEEE Journal of Quantum Electronics, Vol. 40, No. 2, 2004.

A. A. Dikshit and J. M. Pikal, “The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum dot lasers,” Appl. Phys. Lett., Vol. 82, No. 26, pp. 4812-4814, 2003 .

A. A. Dikshit and J. M. Pikal, “Effect of free carriers and excitons on the temperature characteristics of InAs/InGaAs quantum dot lasers,” in Semiconductor Optoelectronic Devices for Lightwave Communication, Joachim Piprek, Editor, Proc. of SPIE Vol. 5248, pp. 166-175, 2003.

A. A. Dikshit and J. M. Pikal, “The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum dot lasers,” Virtual Journal of Nanoscale Science & Technology, www.vjnano.org, July 7, 2003.

J. M. Pikal, “Quantum Dots Active Regions for Semiconductor Lasers,” Invited presentation given at the Workshop on Molecular wires and devices, Laramie WY, July 28 – August 2, 2002.

C. S. Menoni, O. Anton, D. Patel, G. Vaschenko, G. Y. Robinson, and J. M. Pikal, “Improvement in the frequency response of 1.3 µm buried heterostructure InAsP lasers,” (Invited), SPIE Proc. On Ultrafast Phenomena in Semiconductors VI, Vol. 4643, pp. 181-185, 2002.

O. Anton, G. Vaschenko, D. Patel, J. M. Pikal, and C. S. Menoni, “Small Signal Frequency Response of Laser Diodes Obtained with a Femtosecond frequency Comb,” Proc. SPIE Vol. 4871, pp. 95-102, 2002.

A. A. Dikshit and J. M. Pikal, “Effect of excited state transitions and Auger recombination on the T₀ of InAs/InGaAs quantum dot lasers,” in OSA Trends in Optics and Photonics (TOPS) Vol. 73, Conference on Lasers and Electro-Optics, OSA Technical Digest, Postconference Edition (Optical Society of America, Washington DC, 2002), pp. 547-548.

O. Anton, G. Vaschenko, D. Patel, G.Y. Robinson, C. S. Menoni, and J. M. Pikal, “Femtosecond optical modulation measurements of the 3 dB bandwidth of 1.3 µm InAsP lasers,” in OSA Trends in Optics and Photonics (TOPS) Vol. 73, Conference on Lasers and Electro-Optics, OSA Technical Digest, Postconference Edition (Optical Society of America, Washington DC, 2002), pp. 540-541.

O. Anton, D. Patel, G. Vaschenko, G. Y. Robinson, J. Pikal, and C. S. Menoni, “Analysis of the modulation response of 1.3 µm strained InAsP lasers,” in Semiconductor Lasers for Lightwave Communications Systems, Carmen S. Menoni, Richard P. Mirin, Editors, Proc. of SPIE Vol. 4533, pp. 82-90 (2001).

R. Slaby, G. Vaschenko, C. S. Menoni, G. Y. Robinson, J. M. Pikal, and C. M. Sotomayor Torres, “Carrier Capture in 1.3 µm InAsP/InGaAsP quantum well laser structures,” in Conference on Lasers and Electro-Optics, OSA Technical Digest, (Optical Society of America, Washington DC, 2000), pp. 176.

G. Vaschenko, R. Slaby, C. S. Menoni, G. Y. Robinson, J. M. Pikal, and C. M. Sotomayor Torres, "Carrier Capture in InAsP/InGaAsP quantum well structures," Bulletin American Physical Society, Vol. 45, No. 1, pp. 293, Minneapolis, MN. 2000.

O. Anton, S. Piper, G. Vaschenko, C.S. Menoni, and J. M. Pikal, “Understanding the influence of carrier transport processes in the high frequency response of 1.3µm InAsP lasers,” Presented at the American Physical Society – Four Corners Meeting, Fort Collins, CO. 2000.

J. M. Pikal, C. S. Menoni, P. Thiagarajan, G. Y. Robinson and H. Temkin, "Temperature Dependence of Intrinsic Recombination Coefficients in 1.3 µm InAsP/InP Quantum Well Semiconductor Lasers," Appl. Phys. Lett., Vol. 76, No. 19, pp. 2659-2661, 2000

D. Patel, J. M. Pikal, L. Miao, C. S. Menoni, K.J. Thomas, F.A. Kish, and M.R. Hueschen, "Effect of Band Structure Modification on the Output Characteristics of AlGaInP Light Emitting Diodes," Appl. Phys. Lett., Vol. 75, No. 20, pp. 3201-3203, 1999

J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Carrier Lifetime and Recombination in Long Wavelength Quantum Well Lasers," IEEE Journal of Selected Topics in Quantum Electronics, Vol. 5, No. 3, pp. 613-619, 1999

J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Intrinsic Recombination Coefficients in Quantum Well Semiconductor Lasers," Proceedings for the Lasers and Electro-Optics Society Annual Meeting, Vol. 2, pp. 661-662, San Francisco, CA. 1999.

D. Patel, J.M. Pikal, L. Miao, C.S. Menoni, K.J. Thomas, F.A. Kish, M.R. Hueschen, "Effect of band-structure Modification on the Output Characteristics of AlGaInP Light-Emitting Diodes," in Conference on Lasers and Electro-Optics, OSA Technical Digest, (Optical Society of America, Washington DC, 1999), pp. 146-147.

D. Patel, J. Pikal, Linshi Miao, C. S. Menoni, K. J. Thomas, F. A. Kish, M. R. Hueschen, "Effect of Electronic Structure Changes on the Output of AlGaInP Light Emitting Diodes," Bulletin of the American Physical Society Centennial Meeting, Vol. 44, No. 1, pp. 210, Atlanta, GA. 1999

J. M. Pikal, C. S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Impedance Independent Optical Carrier Lifetime Measurements in Semiconductor Lasers," Review of Scientific Instruments, Vol. 69, No. 12, pp. 4247-4248, 1998

Gregory J. Fetzer, Linshi Miao, Juan L.A. Chilla, Jon M. Pikal, and Carmen Menoni, "NO₂ photometer based on solid state light sources," Appl. Opt., Vol. 37, No. 24, pp. 5590-5595, 1998

D. Patel, J. M. Pikal, and C. S. Menoni, "Effect of Band Structure Modification on the Internal Losses of 1.3µm InGaAsP Lasers," Proceedings for the Conference on Lasers and Electro-Optics, pp. 237-238, San Francisco, CA. 1998

C. S. Menoni, D. Patel, J. M. Pikal, "Variation in the Internal Loss of 1.3 µm InGaAsP Lasers with Hydrostatic Pressure and their Impact on the Laser Output," Bulletin of the Annual Meeting of the American Physical Society, Vol. 43, No. 1, pp. 648, Los Angeles, CA. 1998

Jon M. Pikal, Carmen S. Menoni, H. Temkin, P. Thiagarajan, and G. Y. Robinson, "Laser Impedance Independent Optical Carrier Lifetime Measurements," in Proceedings for the Lasers and Electro-Optics Society Annual Meeting, pp. 140-141, San Francisco, CA. 1997

J. M. Pikal, P. Thiagarajan, C. S. Menoni, G. Y. Robinson, H. Temkin, "Carrier Lifetimes and Gain in 1.3 µm Strained InAsP/InGaAsP Multiple-Quantum-Well Lasers," in Conference on Lasers and Electro-Optics, Vol. 11, 1997 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1997) pp. 158-159.

A. A. Bernussi, J. Pikal, H. Temkin, D. L. Coblentz, and R. A. Logan, "Rate Equation Model of High-Temperature Performance of InGaAsP Quantum Well Lasers," Appl. Phys. Lett., Vol. 66, No. 26, pp. 3606-3608, June 1995

Last Updated January 12, 2005